Description
| CL(IDD) | 22 cycles |
| Row Cycle Time (tRCmin) | 45.75ns (min.) |
| Refresh to Active/Refresh Command Time (tRFCmin) | 350ns (min.) |
| Row Active Time (tRASmin) | 32ns (min.)F |
| UL Rating | 94 V – 0 |
| Operating Temperature | 0°C to +85°C |
| Storage Temperature | -55°C to +100°C |
Product Features
| Power Requirements | VDD = 1.2V VDDQ = 1.2V VPP = 2.5V VDDSPD = 2.41V to 2.75V |
| Performance & Speed | Data transfer rates: PC4-3200, PC4-2933, PC4-2666, PC4-2400, PC4-2133, PC4-1866, PC4-1600 16 internal banks with bank grouping CAS to CAS latency (tCCD_L, tCCD_S) optimization 8 bit pre-fetch Burst Length (BL) switch on-the-fly BL8 or BC4 (Burst Chop) |
| Reliability & Error Correction | ECC error correction and detection Write CRC supported at all speed grades CA parity (Command/Address Parity) mode Temperature sensor with integrated SPD |
| Technical Features | Bi-Directional Differential Data Strobe On-Die Termination (ODT) Per DRAM Addressability Internal Vref DQ level generation |
| Compliance & Standards | DDR4 SDRAM datasheet compliant RoHS directive compliance |
